2SD641 NPN-type Bipolar Junction Transistor

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Çü¹ø	2SD641
Á¾·ù	NPN BJT
Á¦Á¶»ç	Toshiba
¿ëµµ	SW
±¸Á¶	Si.TMe
Âü°í	.

Àü±âÀû Ư¼º

ÃÖ´ë Á¤°Ý (T_a = 25^oC)

Ç׸ñ Data ´ÜÀ§ VCBO 600 V VCEO 400 V IC 15 A

Ç׸ñ Data ´ÜÀ§ PD,a     PD,c 150 W Tj 150 oC




Àü±âÀû Ư¼º (T_a = 25^oC)

Ç׸ñ Data ´ÜÀ§ fT 4 Mc rbb'   Ohm Cob 150 pF

Ç׸ñ Data ´ÜÀ§ ICBO,max 500 uA VCBÁ¶°Ç 500 V




H-Parameter (T_a = 25^oC)

Ç׸ñ Data ´ÜÀ§ hFE,min 20 - Á¶ °Ç VCE 5 V IC 5 A hFE,max 140 - Á¶ °Ç VCE 5 V IC 5 A

Ç׸ñ Data ´ÜÀ§ hfe   - hie   KOhm hre   - hoe   uS Á¶ °Ç VCE   V IC

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