2SC388
NPN-type Bipolar Junction Transistor
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Çü¹ø
2SC388
Á¾·ù
NPN BJT
Á¦Á¶»ç
Toshiba
¿ëµµ
RF,Conv,Mix
±¸Á¶
Si.EP
Âü°í
.
Àü±âÀû Ư¼º
ÃÖ´ë Á¤°Ý (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
V
CBO
20
V
V
CEO
25
V
I
C
20
mA
Ç׸ñ
Data
´ÜÀ§
P
D,a
P
D,c
200
mW
T
j
125
o
C
Àü±âÀû Ư¼º (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
f
T
450
Mc
rbb'
18
Ohm
C
ob
1.6
pF
Ç׸ñ
Data
´ÜÀ§
I
CBO,max
0.5
uA
V
CB
Á¶°Ç
15
V
H-Parameter (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
h
FE,min
-
Á¶
°Ç
V
CE
V
I
C
h
FE,max
-
Á¶
°Ç
V
CE
V
I
C
Ç׸ñ
Data
´ÜÀ§
h
fe
80
-
h
ie
KOhm
h
re
-
h
oe
uS
Á¶
°Ç
V
CE
3
V
I
C
8
mA
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