2SC372
NPN-type Bipolar Junction Transistor
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Çü¹ø
2SC372
Á¾·ù
NPN BJT
Á¦Á¶»ç
Toshiba
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RF,Conv,Mix,Osc
±¸Á¶
Si.EP
Âü°í
2SA495 Comp.
Àü±âÀû Ư¼º
ÃÖ´ë Á¤°Ý (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
V
CBO
60
V
V
CEO
50
V
I
C
150
mA
Ç׸ñ
Data
´ÜÀ§
P
D,a
P
D,c
400
mW
T
j
125
o
C
Àü±âÀû Ư¼º (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
f
T
200
Mc
rbb'
5
Ohm
C
ob
2
pF
Ç׸ñ
Data
´ÜÀ§
I
CBO,max
0.1
uA
V
CB
Á¶°Ç
60
V
H-Parameter (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
h
FE,min
70
-
Á¶
°Ç
V
CE
1
V
I
C
10
mA
h
FE,max
400
-
Á¶
°Ç
V
CE
1
V
I
C
10
mA
Ç׸ñ
Data
´ÜÀ§
h
fe
-
h
ie
KOhm
h
re
-
h
oe
uS
Á¶
°Ç
V
CE
V
I
C
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