2SA817
PNP-type Bipolar Junction Transistor
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2SA817
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PNP BJT
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Toshiba
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Si.E
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2SC1627 Comp.
Àü±âÀû Ư¼º
ÃÖ´ë Á¤°Ý (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
V
CBO
-80
V
V
CEO
-80
V
I
C
-300
mA
Ç׸ñ
Data
´ÜÀ§
P
D,a
P
D,c
600
mW
T
j
150
o
C
Àü±âÀû Ư¼º (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
f
T
100
Mc
rbb'
Ohm
C
ob
14
pF
Ç׸ñ
Data
´ÜÀ§
I
CBO,max
-0.1
uA
V
CB
Á¶°Ç
-50
V
H-Parameter (T
a
= 25
o
C)
Ç׸ñ
Data
´ÜÀ§
h
FE,min
70
-
Á¶
°Ç
V
CE
-2
V
I
C
-50
mA
h
FE,max
240
-
Á¶
°Ç
V
CE
-2
V
I
C
-50
mA
Ç׸ñ
Data
´ÜÀ§
h
fe
-
h
ie
KOhm
h
re
-
h
oe
uS
Á¶
°Ç
V
CE
V
I
C
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